Detail publikace

Floating gate MOSFET for low power applications

KHATEB, A., MUSIL, V.

Originální název

Floating gate MOSFET for low power applications

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Circuits using floating-gate MOS transistors are well known from EPROMs, EEPROMs, and flash memories. Floating-gate circuits provide IC designers with a practical continuous-time capacitor-based technology, instead of the resistor-based technology used in discrete circuits. A floating gate occurs when we have no dc path to a fixed potential, precisely the effect traditionally avoided by many circuit designers and circuit simulators. The floating-gate voltage can modulate a channel between a source and drain and therefore can be used in computation. Capacitors coupling into this floating gate become effective gates of this transistor, where the gate strength depends upon the capacitor size. Floating-gate devices can become integral parts of continuous- time amplifiers and filters. In Ultra-Low-Voltage Floating-Gate Transconductance Amplifiers and other applications.

Klíčová slova

Microelectronics, floating-gate MOSFET, low power.

Autoři

KHATEB, A., MUSIL, V.

Rok RIV

2003

Vydáno

22. 9. 2003

Nakladatel

Zd. Novotný

Místo

Brno

ISBN

80-214-2461-3

Kniha

Proceedings of the Socrates Workshop. Short Contributions

Číslo edice

první

Strany od

76

Strany do

79

Strany počet

4

BibTex

@inproceedings{BUT9583,
  author="Fabian {Khateb} and Vladislav {Musil}",
  title="Floating gate MOSFET for low power applications",
  booktitle="Proceedings of the Socrates Workshop. Short Contributions",
  year="2003",
  number="první",
  pages="4",
  publisher="Zd. Novotný",
  address="Brno",
  isbn="80-214-2461-3"
}