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GRMELA, L. HRUŠKA, P.
Originální název
Simulation of quantum dot in electrostatic fields
Typ
článek ve sborníku ve WoS nebo Scopus
Jazyk
angličtina
Originální abstrakt
Behavior of a nanostructure consisting of Si quantum dot (QD) embedded in SiO2 dielectric medium, which is under bias of varying electrostatic field is simulated. The paper presents the wave functions psi, probability functions psi.psi* and energies of quantum states of a QD. Abrupt displacement of the peak of psi.psi* at a certain field value is elucidated as electron emission. The field distribution and the characteristics of the nanostructure quantum states are simulated numerically with help of Comsol Multiphysics Poisson-Schrödinger 2D model, developed by the authors.
Klíčová slova
quantum dot,field distribution,electrostatic field, wave functions
Autoři
GRMELA, L.; HRUŠKA, P.
Rok RIV
2012
Vydáno
10. 9. 2012
Místo
Kharkiv, Ukraine
ISBN
978-1-4673-4479-1
Kniha
Mathematical Methods in Electromagnetic Theory
Strany od
193
Strany do
196
Strany počet
4
BibTex
@inproceedings{BUT96009, author="Lubomír {Grmela} and Pavel {Hruška}", title="Simulation of quantum dot in electrostatic fields", booktitle="Mathematical Methods in Electromagnetic Theory", year="2012", pages="193--196", address="Kharkiv, Ukraine", isbn="978-1-4673-4479-1" }