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GRMELA, L. ŠIK, O. ŠIKULA, J.
Originální název
Noise Contact Study of CdTe Radiation Detectors
Typ
článek ve sborníku ve WoS nebo Scopus
Jazyk
angličtina
Originální abstrakt
We have compared noise spectra and charge transport properties analysis results of CdTe radiation detectors: low-ohmic and semi-insulating. We observed assymmetry of IV characteristics of the low-ohmic detector between "normal" nad "reverse" bias, showing improper quality of contacts preparation, which resulted in higher concentration of impurities in M-S interface area. This finding was supported by the fact that the low frequency noise spectral density magnitude was proportional to applied voltage with exponent of 2.7, which is higher than theoretical value 2. The more advanced manufacturing technology of the semi-insulating detector resulted in symmetric contacts IV characteristics and its linear character. Also, this detector showed lower increase of noise spectral density magnitude with exponent of 2.3.
Klíčová slova
CdTe, 1/f noise, semiconductor reliability, semiconductor charge transport mechanism
Autoři
GRMELA, L.; ŠIK, O.; ŠIKULA, J.
Rok RIV
2012
Vydáno
17. 10. 2012
Místo
Košice, Slovensko
ISBN
978-80-553-1175-3
Kniha
Proceedings of the Scientific Conference Physics of Materials 2012
Edice
první
Číslo edice
1
Strany od
99
Strany do
104
Strany počet
6
BibTex
@inproceedings{BUT96521, author="Lubomír {Grmela} and Ondřej {Šik} and Josef {Šikula}", title="Noise Contact Study of CdTe Radiation Detectors", booktitle="Proceedings of the Scientific Conference Physics of Materials 2012", year="2012", series="první", number="1", pages="99--104", address="Košice, Slovensko", isbn="978-80-553-1175-3" }