Přístupnostní navigace
E-application
Search Search Close
Project detail
Duration: 01.03.2017 — 28.02.2018
Funding resources
Brno University of Technology - Vnitřní projekty VUT
- whole funder (2017-01-01 - 2018-12-31)
On the project
Fabrication of more complex graphene electronic devices requires the ability to modify and understand changes in the electronic structure of graphene. The focus of this project is to investigate doping effects of Ga, Al and H atoms on the graphene layer. To achieve this goal, ultra high vacuum measuring device will be designed and constructed. The custom made design will allow for measurement of graphene electrical properties during the deposition of atoms under various conditions (temperature, pressure, gases).
Mark
FSI/STI-J-17-4752
Default language
Czech
People responsible
Kormoš Lukáš, Ing., Ph.D. - fellow researcherŠikola Tomáš, prof. RNDr., CSc. - fellow researcherPiastek Jakub, Ing., Ph.D. - principal person responsible
Units
Institute of Physical Engineering- internal (2017-01-01 - 2017-12-31)Central European Institute of Technology BUT- internal (2017-01-01 - 2017-12-31)Faculty of Mechanical Engineering- beneficiary (2017-01-01 - 2017-12-31)