Fabrication of more complex graphene electronic devices requires the ability to modify and understand changes in the electronic structure of graphene. The focus of this project is to investigate doping effects of Ga, Al and H atoms on the graphene layer. To achieve this goal, ultra high vacuum measuring device will be designed and constructed. The custom made design will allow for measurement of graphene electrical properties during the deposition of atoms under various conditions (temperature, pressure, gases).

FSI/STI-J-17-4752

Czech

Piastek Jakub, Ing., Ph.D. - principal person responsible
Kormoš Lukáš, Ing., Ph.D. - fellow researcher
Šikola Tomáš, prof. RNDr., CSc. - fellow researcher

Institute of Physical Engineering
- responsible department (2.10.2017 - not assigned)
Central European Institute of Technology BUT
- internal (1.1.2017 - 31.12.2017)
Institute of Physical Engineering
- internal (1.1.2017 - 31.12.2017)
Faculty of Mechanical Engineering
- beneficiary (1.1.2017 - 31.12.2017)

Responsibility: Piastek Jakub, Ing., Ph.D.