This project was co-financed with state support of the CR Technological Agency as part of Programu na podporu aplikovaného výzkumu a experimentálního vývoje EPSILON (2015-2025)
www.tacr.cz
Research useful for society.

Project detail

RandD of high voltage Si rectifiers for effective conversion of high current power

Duration: 01.01.2018 — 31.12.2020

Funding resources

Technologická agentura ČR - Program na podporu aplikovaného výzkumu a experimentálního vývoje EPSILON (2015-2025)

- whole funder (2017-12-20 - 2020-12-31)

On the project

Description in English
The aim of the project is to create a portfolio of high voltage (> 600V) silicon diodes for High Performance Power Conversion (HPPC) and Motor Control (MC) applications in the automotive, renewable energy and power grids sectors. The devices are used for efficient conversion of high current powers. The use of new manufacturing technology with the application of developed solutions will take place immediately after the achievement of planned results - in 2021.

Key words in English
Semiconductor, Silicon, Rectifier, power, voltage, current, EV

Mark

TH03010006

Default language

Czech

People responsible

Bartošík Miroslav, doc. Ing., Ph.D. - fellow researcher
Potoček Michal, Ing., Ph.D. - fellow researcher
Procházka Pavel, Ing., Ph.D. - fellow researcher
Bábor Petr, doc. Ing., Ph.D. - principal person responsible

Units

Fabrication and Characteris. of Nanostr.
- (2017-05-15 - not assigned)

Results

BÁBOR, P.; POTOČEK, M.; KOLÍBAL, M.; ŠIK, O.: Metody kvantitativní analýzy dopantů a vysokonapěťová diagnostika čipů; Metody kvantitativní analýzy dopantů a vysokonapěťová diagnostika čipů. Purkyňova 123, Brno 61200, budova C, laboratore cistych prostor. URL: http://nano.ceitec.cz/. (ostatní)
Detail

Responsibility: Bábor Petr, doc. Ing., Ph.D.