Project detail
Electrical measurements and analysis of parameters FET transistors at Cryogenic temperatures Part 3
Duration: 1.6.2018 — 30.10.2018
Funding resources
Neveřejný sektor - Přímé kontrakty - smluvní výzkum, neveřejné zdroje
On the project
Electrical measurements and analysis of parameters FET transistors at Cryogenic temperatures Part 3
Keywords
cryogenycs, noise
Mark
SR18857066
Default language
English
People responsible
Holcman Vladimír, doc. Ing., Ph.D. - principal person responsible
Majzner Jiří, Ing., Ph.D. - fellow researcher
Sobola Dinara, doc. Mgr., Ph.D. - fellow researcher
Trčka Tomáš, Ing., Ph.D. - fellow researcher
Units
Department of Physics
- responsible department (30.10.2018 - not assigned)
division-FYZ-SIX
- beneficiary (30.10.2018 - not assigned)
Results
HOLCMAN, V.; MAJZNER, J.; TRČKA, T.; SOBOLA, D. Cryo Data Extraction STATEMENT OF WORK-The part #4. 2018. p. 1-85.
Detail
Responsibility: Holcman Vladimír, doc. Ing., Ph.D.