Project detail

Formation and resistive switching properties of nanostructured HfO2/Al2O3 composite films

Duration: 1.3.2020 — 28.2.2021

Funding resources

Vysoké učení technické v Brně - Vnitřní projekty VUT

- whole funder (1. 1. 2020 - 31. 12. 2021)

On the project

The project is aimed at achieving and investigating redox-based resistive switching phenomena in nanostructured HfO2/Al2O3 composite films fabricated via the PAA-assisted anodization technique. Various nanostructured HfO2/Al2O3 composite films are produced via electrochemical oxidation of Al/Hf thin films sputter-deposited on Si wafer. Electrodes are deposited on top of fabricated composite films and metal/oxide/metal structures are created. Resistive switching behavior of nanostructured HfO2/Al2O3 composite film in metal/oxide/metal structures is investigated via electronic measurements.

Mark

CEITEC VUT-J-20-6513

Default language

Czech

People responsible

Kamnev Kirill, M.Sc., Ph.D. - principal person responsible
Mozalev Alexander, Dr. - fellow researcher

Units

Smart Nanodevices
- responsible department (5.3.2020 - not assigned)
Smart Nanodevices
- co-beneficiary (1.1.2020 - 31.12.2020)
Central European Institute of Technology BUT
- beneficiary (1.1.2020 - 31.12.2020)

Responsibility: Kamnev Kirill, M.Sc., Ph.D.