Project detail
Electrical measurements and analysis of parameters FET transistors at Cryogenic temperatures Part 3
Duration: 1.4.2019 — 1.6.2019
Funding resources
Neveřejný sektor - Přímé kontrakty - smluvní výzkum, neveřejné zdroje
On the project
Electrical measurements and analysis of parameters FET transistors at Cryogenic temperatures Part 3
Keywords
cryogenycs, noise
Mark
SR18957069
Default language
English
People responsible
Holcman Vladimír, doc. Ing., Ph.D. - principal person responsible
Units
Department of Physics
- responsible department (9.11.2020 - not assigned)
Department of Physics
- beneficiary (9.11.2020 - not assigned)
Responsibility: Holcman Vladimír, doc. Ing., Ph.D.