Project detail

Electrical measurements and analysis of parameters FET transistors at Cryogenic temperatures Part 3

Duration: 01.04.2019 — 01.06.2019

Funding resources

Neveřejný sektor - Přímé kontrakty - smluvní výzkum, neveřejné zdroje
- whole funder (2019-04-01 - 2019-06-01)

On the project

Electrical measurements and analysis of parameters FET transistors at Cryogenic temperatures Part 3

Keywords
cryogenycs, noise

Mark

SR18957069

Default language

English

People responsible

Holcman Vladimír, doc. Ing., Ph.D. - principal person responsible

Units

Department of Physics
- beneficiary (2020-11-09 - not assigned)

Responsibility: Holcman Vladimír, doc. Ing., Ph.D.