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ABUETWIRAT, I. PALAI-DANY, T.
Original Title
Dielectric Properties of Niobium Oxide Film and Tantalum Oxide Film at Electrolytic Niobium And Tantalum Capacitors
Type
conference paper
Language
English
Original Abstract
Complex permittivity of the niobium oxide capacitor 4.7 micro-F/ 10 Vdc and tantalum oxide 1 micro-F/ 25 Vdc was measured at room temperature at frequencies from 20 Hz to 2 MHz using the HP (Agilent) E4980A impedance analyzer, with Agilent 16034E 2-terminal test fixture for surface mounted devices (SMD). The real part of the complex permittivity for the niobium oxide capacitor at room temperature is 50 at 20Hz with one dielectric relaxation peak, which was observed at about 10 kHz. Whereas the real part of the complex permittivity for tantalum oxide capacitor at room temperature is 27 at 20Hz with one dielectric relaxation peak, which was observed at about 100 kHz. It has been shown that to be useful to use niobium and tantalum oxide capacitor below 100 kHz for measuring the dielectric properties of niobium and tantalum oxide film.
Keywords
Real part of complex permittivity, imaginary part of complex permittivity, loss factor, conductivity.
Authors
ABUETWIRAT, I.; PALAI-DANY, T.
RIV year
2012
Released
21. 5. 2012
Publisher
FEKT VUT Brno
Location
Žilina, Slovak Republic
ISBN
978-1-4673-1178-6
Book
9th ELEKTRO 2012 international conference
Edition
1
Edition number
Pages from
484
Pages to
488
Pages count
5
BibTex
@inproceedings{BUT100594, author="Inas Faisel {Abuetwirat} and Tomáš {Palai-Dany}", title="Dielectric Properties of Niobium Oxide Film and Tantalum Oxide Film at Electrolytic Niobium And Tantalum Capacitors", booktitle="9th ELEKTRO 2012 international conference", year="2012", series="1", number="1", pages="484--488", publisher="FEKT VUT Brno", address="Žilina, Slovak Republic", isbn="978-1-4673-1178-6" }