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ABUETWIRAT, I. PALAI-DANY, T.
Originální název
Dielectric Properties of Niobium Oxide Film and Tantalum Oxide Film at Electrolytic Niobium And Tantalum Capacitors
Typ
článek ve sborníku ve WoS nebo Scopus
Jazyk
angličtina
Originální abstrakt
Complex permittivity of the niobium oxide capacitor 4.7 micro-F/ 10 Vdc and tantalum oxide 1 micro-F/ 25 Vdc was measured at room temperature at frequencies from 20 Hz to 2 MHz using the HP (Agilent) E4980A impedance analyzer, with Agilent 16034E 2-terminal test fixture for surface mounted devices (SMD). The real part of the complex permittivity for the niobium oxide capacitor at room temperature is 50 at 20Hz with one dielectric relaxation peak, which was observed at about 10 kHz. Whereas the real part of the complex permittivity for tantalum oxide capacitor at room temperature is 27 at 20Hz with one dielectric relaxation peak, which was observed at about 100 kHz. It has been shown that to be useful to use niobium and tantalum oxide capacitor below 100 kHz for measuring the dielectric properties of niobium and tantalum oxide film.
Klíčová slova
Real part of complex permittivity, imaginary part of complex permittivity, loss factor, conductivity.
Autoři
ABUETWIRAT, I.; PALAI-DANY, T.
Rok RIV
2012
Vydáno
21. 5. 2012
Nakladatel
FEKT VUT Brno
Místo
Žilina, Slovak Republic
ISBN
978-1-4673-1178-6
Kniha
9th ELEKTRO 2012 international conference
Edice
1
Číslo edice
Strany od
484
Strany do
488
Strany počet
5
BibTex
@inproceedings{BUT100594, author="Inas Faisel {Abuetwirat} and Tomáš {Palai-Dany}", title="Dielectric Properties of Niobium Oxide Film and Tantalum Oxide Film at Electrolytic Niobium And Tantalum Capacitors", booktitle="9th ELEKTRO 2012 international conference", year="2012", series="1", number="1", pages="484--488", publisher="FEKT VUT Brno", address="Žilina, Slovak Republic", isbn="978-1-4673-1178-6" }