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DALLAEVA, D. TOMÁNEK, P.
Original Title
Substrate Preparation for Manufacturing of Aluminum Nitride Layers
Type
journal article - other
Language
English
Original Abstract
Aluminum nitrides layers prepared on sapphire substrates are examined. The substrate surface was treated by dry plasma etching. The morphology of aluminum nitride thin films was studied by atomic force microscopy. Lateral force atomic force microscopy was used to study the morphology heterogeneity. The dependence of films morphology on the formation conditions has been defined. The objective of the study contributes to the improvement of technological process of dry etching and film deposition.
Keywords
aluminum oxide, aluminum nitride, dry etching
Authors
DALLAEVA, D.; TOMÁNEK, P.
RIV year
2013
Released
18. 11. 2013
Publisher
Univezitní 8, Plzeň, 306 14, Česká republika
Location
http://electroscope.zcu.cz
ISBN
1802-4564
Periodical
ElectroScope - http://www.electroscope.zcu.cz
Year of study
Number
5
State
Czech Republic
Pages from
1
Pages to
Pages count
BibTex
@article{BUT103004, author="Dinara {Sobola} and Pavel {Tománek}", title="Substrate Preparation for Manufacturing of Aluminum Nitride Layers", journal="ElectroScope - http://www.electroscope.zcu.cz", year="2013", volume="2013", number="5", pages="1--5", issn="1802-4564" }