Detail publikace

Substrate Preparation for Manufacturing of Aluminum Nitride Layers

DALLAEVA, D. TOMÁNEK, P.

Originální název

Substrate Preparation for Manufacturing of Aluminum Nitride Layers

Typ

článek v časopise - ostatní, Jost

Jazyk

angličtina

Originální abstrakt

Aluminum nitrides layers prepared on sapphire substrates are examined. The substrate surface was treated by dry plasma etching. The morphology of aluminum nitride thin films was studied by atomic force microscopy. Lateral force atomic force microscopy was used to study the morphology heterogeneity. The dependence of films morphology on the formation conditions has been defined. The objective of the study contributes to the improvement of technological process of dry etching and film deposition.

Klíčová slova

aluminum oxide, aluminum nitride, dry etching

Autoři

DALLAEVA, D.; TOMÁNEK, P.

Rok RIV

2013

Vydáno

18. 11. 2013

Nakladatel

Univezitní 8, Plzeň, 306 14, Česká republika

Místo

http://electroscope.zcu.cz

ISSN

1802-4564

Periodikum

ElectroScope - http://www.electroscope.zcu.cz

Ročník

2013

Číslo

5

Stát

Česká republika

Strany od

1

Strany do

5

Strany počet

5

BibTex

@article{BUT103004,
  author="Dinara {Sobola} and Pavel {Tománek}",
  title="Substrate Preparation for Manufacturing of Aluminum Nitride Layers",
  journal="ElectroScope - http://www.electroscope.zcu.cz",
  year="2013",
  volume="2013",
  number="5",
  pages="1--5",
  issn="1802-4564"
}