Publication detail

Influence of localized structural defects on the pn junction properties

ŠKARVADA, P. TOMÁNEK, P. ŠICNER, J.

Original Title

Influence of localized structural defects on the pn junction properties

Type

journal article in Web of Science

Language

English

Original Abstract

Local defects, as micro-fractures, precipitates and other material inhomogeneities in solar cell structure, evidently modify electrical and photoelectrical behavior of the latter. To improve the efficiency and lifetime of existing solar cells, it is important to localize these defects which influence the p-n properties, and assign them corresponding electrical characteristics. Although the electric breakdown can be evident in current-voltage plot, the localization of local defects in the sample, that generate this breakdown, is not so easy task. It has to be done by microscopic investigations and measurement of light emission from defects under electrical bias conditions. Thus to contribute to this end, the structure of defects is microscopically investigated and consequently, the defects can be removed by focused ion beam milling. The experimental results obtained from samples before and after milling are also discussed.

Keywords

Solar cell, defect, silicon, ion beam milling

Authors

ŠKARVADA, P.; TOMÁNEK, P.; ŠICNER, J.

RIV year

2014

Released

1. 1. 2014

Publisher

Trans tech publication

Location

Switzerland

ISBN

1013-9826

Periodical

Key Engineering Materials (print)

Year of study

592-593

Number

1

State

Swiss Confederation

Pages from

441

Pages to

444

Pages count

4

BibTex

@article{BUT104974,
  author="Pavel {Škarvada} and Pavel {Tománek} and Jiří {Šicner}",
  title="Influence of localized structural defects on the pn junction properties",
  journal="Key Engineering Materials (print)",
  year="2014",
  volume="592-593",
  number="1",
  pages="441--444",
  doi="10.4028/www.scientific.net/KEM.592-593.441",
  issn="1013-9826"
}