Detail publikace

Influence of localized structural defects on the pn junction properties

ŠKARVADA, P. TOMÁNEK, P. ŠICNER, J.

Originální název

Influence of localized structural defects on the pn junction properties

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

Local defects, as micro-fractures, precipitates and other material inhomogeneities in solar cell structure, evidently modify electrical and photoelectrical behavior of the latter. To improve the efficiency and lifetime of existing solar cells, it is important to localize these defects which influence the p-n properties, and assign them corresponding electrical characteristics. Although the electric breakdown can be evident in current-voltage plot, the localization of local defects in the sample, that generate this breakdown, is not so easy task. It has to be done by microscopic investigations and measurement of light emission from defects under electrical bias conditions. Thus to contribute to this end, the structure of defects is microscopically investigated and consequently, the defects can be removed by focused ion beam milling. The experimental results obtained from samples before and after milling are also discussed.

Klíčová slova

Solar cell, defect, silicon, ion beam milling

Autoři

ŠKARVADA, P.; TOMÁNEK, P.; ŠICNER, J.

Rok RIV

2014

Vydáno

1. 1. 2014

Nakladatel

Trans tech publication

Místo

Switzerland

ISSN

1013-9826

Periodikum

Key Engineering Materials (print)

Ročník

592-593

Číslo

1

Stát

Švýcarská konfederace

Strany od

441

Strany do

444

Strany počet

4

BibTex

@article{BUT104974,
  author="Pavel {Škarvada} and Pavel {Tománek} and Jiří {Šicner}",
  title="Influence of localized structural defects on the pn junction properties",
  journal="Key Engineering Materials (print)",
  year="2014",
  volume="592-593",
  number="1",
  pages="441--444",
  doi="10.4028/www.scientific.net/KEM.592-593.441",
  issn="1013-9826"
}