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KHATEB, F. MOUALLA, F.
Original Title
Noise Models for FET Transistor.
Type
conference paper
Language
English
Original Abstract
Statistical fluctuation of electric charge exists in all conductors, producing random variation of potential between the ends of the conductor. The electric charges in a conductor are found to be in a state of thermal agitation, in thermodynamic equilibrium with the heat motion of the atoms of the conductor. The manifestation of the phenomenon is a fluctuation of potential difference between the terminals of the conductor. The term spontaneous fluctuations, although, perhaps, theoretically the most appropriate, is not commonly used in practice; usually it is simply called noise. This paper presents electrical noise types, which is a significant problem for electrical engineers designing sensitive circuit. The limit to the sensitivity of an electrical circuit is set by the point at which the signal-to-noise ratio drops below acceptable limits.
Authors
KHATEB, F.; MOUALLA, F.
Released
29. 4. 2004
Publisher
Nakl. Ing. Zdeněk Novotný CSc., Ondráčkova 105, Brno
Location
Brno
ISBN
80-214-2636-5
Book
Student EEICT 2004
Edition number
první
Pages from
616
Pages to
620
Pages count
5
BibTex
@inproceedings{BUT10803, author="Fabian {Khateb} and Feras {Moualla}", title="Noise Models for FET Transistor.", booktitle="Student EEICT 2004", year="2004", number="první", pages="5", publisher="Nakl. Ing. Zdeněk Novotný CSc., Ondráčkova 105, Brno", address="Brno", isbn="80-214-2636-5" }