Publication detail

Noise Models for FET Transistor.

KHATEB, F. MOUALLA, F.

Original Title

Noise Models for FET Transistor.

Type

conference paper

Language

English

Original Abstract

Statistical fluctuation of electric charge exists in all conductors, producing random variation of potential between the ends of the conductor. The electric charges in a conductor are found to be in a state of thermal agitation, in thermodynamic equilibrium with the heat motion of the atoms of the conductor. The manifestation of the phenomenon is a fluctuation of potential difference between the terminals of the conductor. The term spontaneous fluctuations, although, perhaps, theoretically the most appropriate, is not commonly used in practice; usually it is simply called noise. This paper presents electrical noise types, which is a significant problem for electrical engineers designing sensitive circuit. The limit to the sensitivity of an electrical circuit is set by the point at which the signal-to-noise ratio drops below acceptable limits.

Authors

KHATEB, F.; MOUALLA, F.

Released

29. 4. 2004

Publisher

Nakl. Ing. Zdeněk Novotný CSc., Ondráčkova 105, Brno

Location

Brno

ISBN

80-214-2636-5

Book

Student EEICT 2004

Edition number

první

Pages from

616

Pages to

620

Pages count

5

BibTex

@inproceedings{BUT10803,
  author="Fabian {Khateb} and Feras {Moualla}",
  title="Noise Models for FET Transistor.",
  booktitle="Student EEICT 2004",
  year="2004",
  number="první",
  pages="5",
  publisher="Nakl. Ing. Zdeněk Novotný CSc., Ondráčkova 105, Brno",
  address="Brno",
  isbn="80-214-2636-5"
}