Detail publikace

Noise Models for FET Transistor.

KHATEB, F. MOUALLA, F.

Originální název

Noise Models for FET Transistor.

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Statistical fluctuation of electric charge exists in all conductors, producing random variation of potential between the ends of the conductor. The electric charges in a conductor are found to be in a state of thermal agitation, in thermodynamic equilibrium with the heat motion of the atoms of the conductor. The manifestation of the phenomenon is a fluctuation of potential difference between the terminals of the conductor. The term spontaneous fluctuations, although, perhaps, theoretically the most appropriate, is not commonly used in practice; usually it is simply called noise. This paper presents electrical noise types, which is a significant problem for electrical engineers designing sensitive circuit. The limit to the sensitivity of an electrical circuit is set by the point at which the signal-to-noise ratio drops below acceptable limits.

Autoři

KHATEB, F.; MOUALLA, F.

Vydáno

29. 4. 2004

Nakladatel

Nakl. Ing. Zdeněk Novotný CSc., Ondráčkova 105, Brno

Místo

Brno

ISBN

80-214-2636-5

Kniha

Student EEICT 2004

Číslo edice

první

Strany od

616

Strany do

620

Strany počet

5

BibTex

@inproceedings{BUT10803,
  author="Fabian {Khateb} and Feras {Moualla}",
  title="Noise Models for FET Transistor.",
  booktitle="Student EEICT 2004",
  year="2004",
  number="první",
  pages="5",
  publisher="Nakl. Ing. Zdeněk Novotný CSc., Ondráčkova 105, Brno",
  address="Brno",
  isbn="80-214-2636-5"
}