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DALLAEVA, D. RAMAZANOV, S. PROKOPYEVA, E. TOMÁNEK, P. GRMELA, L.
Original Title
Local topography of optoelectronic substrates prepared by dry plasma etching process
Type
journal article in Web of Science
Language
English
Original Abstract
In this work, the etch rate of silicon carbide and aluminum oxide were studied as a function of the angle etching material and flow of plasma. Al2O3 and SiC are important materials in the design of optical and electronic devices and the topography of the wafers has a large influence on the device quality. Argon was applied for the dry etching of Al2O3 and SiC wafers. The wafer slope for highest obtained etch is defined. Atomic force microscopy was used to good morphology control of etched wafers. Statistical and correlation analysis was applied to estimate the surface perfection. Interferometry allowed to control etching rate.
Keywords
etching, sapphire, silicon carbide, substrate, atomic force microscopy
Authors
DALLAEVA, D.; RAMAZANOV, S.; PROKOPYEVA, E.; TOMÁNEK, P.; GRMELA, L.
RIV year
2015
Released
7. 1. 2015
Publisher
SPIE
Location
USA
ISBN
0277-786X
Periodical
Proceedings of SPIE
Year of study
9442
Number
State
United States of America
Pages from
9442081
Pages to
9442086
Pages count
6
BibTex
@article{BUT111923, author="Dinara {Sobola} and Shihgasan {Ramazanov} and Elena {Prokopyeva} and Pavel {Tománek} and Lubomír {Grmela}", title="Local topography of optoelectronic substrates prepared by dry plasma etching process", journal="Proceedings of SPIE", year="2015", volume="9442", number="9442", pages="9442081--9442086", doi="10.1117/12.2176367", issn="0277-786X" }