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DALLAEVA, D. RAMAZANOV, S. PROKOPYEVA, E. TOMÁNEK, P. GRMELA, L.
Originální název
Local topography of optoelectronic substrates prepared by dry plasma etching process
Typ
článek v časopise ve Web of Science, Jimp
Jazyk
angličtina
Originální abstrakt
In this work, the etch rate of silicon carbide and aluminum oxide were studied as a function of the angle etching material and flow of plasma. Al2O3 and SiC are important materials in the design of optical and electronic devices and the topography of the wafers has a large influence on the device quality. Argon was applied for the dry etching of Al2O3 and SiC wafers. The wafer slope for highest obtained etch is defined. Atomic force microscopy was used to good morphology control of etched wafers. Statistical and correlation analysis was applied to estimate the surface perfection. Interferometry allowed to control etching rate.
Klíčová slova
etching, sapphire, silicon carbide, substrate, atomic force microscopy
Autoři
DALLAEVA, D.; RAMAZANOV, S.; PROKOPYEVA, E.; TOMÁNEK, P.; GRMELA, L.
Rok RIV
2015
Vydáno
7. 1. 2015
Nakladatel
SPIE
Místo
USA
ISSN
0277-786X
Periodikum
Proceedings of SPIE
Ročník
9442
Číslo
Stát
Spojené státy americké
Strany od
9442081
Strany do
9442086
Strany počet
6
BibTex
@article{BUT111923, author="Dinara {Sobola} and Shihgasan {Ramazanov} and Elena {Prokopyeva} and Pavel {Tománek} and Lubomír {Grmela}", title="Local topography of optoelectronic substrates prepared by dry plasma etching process", journal="Proceedings of SPIE", year="2015", volume="9442", number="9442", pages="9442081--9442086", doi="10.1117/12.2176367", issn="0277-786X" }