Detail publikace

Local topography of optoelectronic substrates prepared by dry plasma etching process

DALLAEVA, D. RAMAZANOV, S. PROKOPYEVA, E. TOMÁNEK, P. GRMELA, L.

Originální název

Local topography of optoelectronic substrates prepared by dry plasma etching process

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

In this work, the etch rate of silicon carbide and aluminum oxide were studied as a function of the angle etching material and flow of plasma. Al2O3 and SiC are important materials in the design of optical and electronic devices and the topography of the wafers has a large influence on the device quality. Argon was applied for the dry etching of Al2O3 and SiC wafers. The wafer slope for highest obtained etch is defined. Atomic force microscopy was used to good morphology control of etched wafers. Statistical and correlation analysis was applied to estimate the surface perfection. Interferometry allowed to control etching rate.

Klíčová slova

etching, sapphire, silicon carbide, substrate, atomic force microscopy

Autoři

DALLAEVA, D.; RAMAZANOV, S.; PROKOPYEVA, E.; TOMÁNEK, P.; GRMELA, L.

Rok RIV

2015

Vydáno

7. 1. 2015

Nakladatel

SPIE

Místo

USA

ISSN

0277-786X

Periodikum

Proceedings of SPIE

Ročník

9442

Číslo

9442

Stát

Spojené státy americké

Strany od

9442081

Strany do

9442086

Strany počet

6

BibTex

@article{BUT111923,
  author="Dinara {Sobola} and Shihgasan {Ramazanov} and Elena {Prokopyeva} and Pavel {Tománek} and Lubomír {Grmela}",
  title="Local topography of optoelectronic substrates prepared by dry plasma etching process",
  journal="Proceedings of SPIE",
  year="2015",
  volume="9442",
  number="9442",
  pages="9442081--9442086",
  doi="10.1117/12.2176367",
  issn="0277-786X"
}