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KOLKA, Z. BIOLEK, D. BIOLKOVÁ, V.
Original Title
Improved Model of TiO2 Memristor
Type
journal article in Web of Science
Language
English
Original Abstract
Analysis of Pickett model of the HP TiO2 memristor presented in this paper reveals an ambiguity of its Port Equation, which may cause non-convergence, numerical errors, and non-physical solutions during time-domain simulation. As there is no easy fix of the original model a new behavioral approximation of static I-V characteristics has been proposed. The approximation matches well the original model and is unambiguous.
Keywords
TiO2 memristor, Port Equation, State Equation, Pickett model, simulation
Authors
KOLKA, Z.; BIOLEK, D.; BIOLKOVÁ, V.
RIV year
2015
Released
1. 6. 2015
Publisher
Společnost pro radiotechnické inženýrství
Location
Brno
ISBN
1210-2512
Periodical
Radioengineering
Year of study
24
Number
2
State
Czech Republic
Pages from
378
Pages to
383
Pages count
6
BibTex
@article{BUT115011, author="Zdeněk {Kolka} and Dalibor {Biolek} and Viera {Biolková}", title="Improved Model of TiO2 Memristor", journal="Radioengineering", year="2015", volume="24", number="2", pages="378--383", doi="10.13164/re.2015.0378", issn="1210-2512" }