Publication detail

Improved Model of TiO2 Memristor

KOLKA, Z. BIOLEK, D. BIOLKOVÁ, V.

Original Title

Improved Model of TiO2 Memristor

Type

journal article in Web of Science

Language

English

Original Abstract

Analysis of Pickett model of the HP TiO2 memristor presented in this paper reveals an ambiguity of its Port Equation, which may cause non-convergence, numerical errors, and non-physical solutions during time-domain simulation. As there is no easy fix of the original model a new behavioral approximation of static I-V characteristics has been proposed. The approximation matches well the original model and is unambiguous.

Keywords

TiO2 memristor, Port Equation, State Equation, Pickett model, simulation

Authors

KOLKA, Z.; BIOLEK, D.; BIOLKOVÁ, V.

RIV year

2015

Released

1. 6. 2015

Publisher

Společnost pro radiotechnické inženýrství

Location

Brno

ISBN

1210-2512

Periodical

Radioengineering

Year of study

24

Number

2

State

Czech Republic

Pages from

378

Pages to

383

Pages count

6

BibTex

@article{BUT115011,
  author="Zdeněk {Kolka} and Dalibor {Biolek} and Viera {Biolková}",
  title="Improved Model of TiO2 Memristor",
  journal="Radioengineering",
  year="2015",
  volume="24",
  number="2",
  pages="378--383",
  doi="10.13164/re.2015.0378",
  issn="1210-2512"
}