Patent detail

HIGH VOLTAGE CAPACITOR AND METHOD

PTÁČEK, K. BURTON, R.

Patent type

Patent

Abstract

In accordance with an embodiment, an electrical element includes a first portion of a first dielectric material between a first portion of a first electrical conductor and a first portion of a second electrical conductor and a second portion of the first dielectric material between a second portion of the first electrical conductor and a first portion of a third electrical conductor. In accordance with another embodiment, a method includes forming a first electrically conductive structure over a first portion of the first layer of dielectric material and forming a second electrically conductive structure over a second portion of the first layer of dielectric material. A second layer of dielectric material is formed over the first electrically conductive structure and a third electrically conductive structure over the second layer of dielectric material, wherein the third electrically conductive structure is over portions of the first and second electrically conductive structures.

Keywords

monolithic; capacitor; demagnetization; sensor; capacitive coupling; on-chip; isolation

Patent number

20150287774

Date of application

20. 3. 2015

Date of registration

8. 10. 2015

Owner

SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Possibilities of use

In order to use the result by another entity, it is always necessary to acquire a license

Licence fee

The licensor requires a license fee for the result

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