Detail patentu

HIGH VOLTAGE CAPACITOR AND METHOD

PTÁČEK, K. BURTON, R.

Typ patentu

patent

Abstrakt

In accordance with an embodiment, an electrical element includes a first portion of a first dielectric material between a first portion of a first electrical conductor and a first portion of a second electrical conductor and a second portion of the first dielectric material between a second portion of the first electrical conductor and a first portion of a third electrical conductor. In accordance with another embodiment, a method includes forming a first electrically conductive structure over a first portion of the first layer of dielectric material and forming a second electrically conductive structure over a second portion of the first layer of dielectric material. A second layer of dielectric material is formed over the first electrically conductive structure and a third electrically conductive structure over the second layer of dielectric material, wherein the third electrically conductive structure is over portions of the first and second electrically conductive structures.

Klíčová slova

monolithic; capacitor; demagnetization; sensor; capacitive coupling; on-chip; isolation

Číslo patentu

20150287774

Datum přihlášky

20. 3. 2015

Datum zápisu

8. 10. 2015

Vlastník

SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

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