Publication detail

Enhanced Model of Nonlinear Spiral High Voltage Divider

PAŇKO, V. BANÁŠ, S. BURTON, R. PTÁČEK, K. DIVÍN, J. DOBEŠ, J.

Original Title

Enhanced Model of Nonlinear Spiral High Voltage Divider

Type

journal article in Web of Science

Language

English

Original Abstract

This paper deals with the enhanced accurate DC and RF model of nonlinear spiral polysilicon voltage divider. The high resistance polysilicon divider is a sensing part of the high voltage startup MOSFET transistor that can operate up to 700 V. This paper presents the structure of a proposed model, implemented voltage, frequency and temperature dependency, and scalability. A special attention is paid to the ability of the created model to cover the mismatch and influence of a variation of process parameters on the device characteristics. Finally, the comparison of measured data vs. simulation is presented in order to confirm the model validity and a typical application is demonstrated.

Keywords

High voltage startup MOSFET; pinchoff;high voltage spiral divider; statistical modeling

Authors

PAŇKO, V.; BANÁŠ, S.; BURTON, R.; PTÁČEK, K.; DIVÍN, J.; DOBEŠ, J.

RIV year

2015

Released

1. 4. 2015

Publisher

ČVUT, Fakulta elektrotechnická

Location

Praha

ISBN

1210-2512

Periodical

Radioengineering

Year of study

24

Number

1

State

Czech Republic

Pages from

130

Pages to

136

Pages count

7

BibTex

@article{BUT119531,
  author="PAŇKO, V. and BANÁŠ, S. and BURTON, R. and PTÁČEK, K. and DIVÍN, J. and DOBEŠ, J.",
  title="Enhanced Model of Nonlinear Spiral High Voltage Divider",
  journal="Radioengineering",
  year="2015",
  volume="24",
  number="1",
  pages="130--136",
  doi="10.13164/re.2015.0130",
  issn="1210-2512"
}