Detail publikace

Enhanced Model of Nonlinear Spiral High Voltage Divider

PAŇKO, V. BANÁŠ, S. BURTON, R. PTÁČEK, K. DIVÍN, J. DOBEŠ, J.

Originální název

Enhanced Model of Nonlinear Spiral High Voltage Divider

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

This paper deals with the enhanced accurate DC and RF model of nonlinear spiral polysilicon voltage divider. The high resistance polysilicon divider is a sensing part of the high voltage startup MOSFET transistor that can operate up to 700 V. This paper presents the structure of a proposed model, implemented voltage, frequency and temperature dependency, and scalability. A special attention is paid to the ability of the created model to cover the mismatch and influence of a variation of process parameters on the device characteristics. Finally, the comparison of measured data vs. simulation is presented in order to confirm the model validity and a typical application is demonstrated.

Klíčová slova

High voltage startup MOSFET; pinchoff;high voltage spiral divider; statistical modeling

Autoři

PAŇKO, V.; BANÁŠ, S.; BURTON, R.; PTÁČEK, K.; DIVÍN, J.; DOBEŠ, J.

Rok RIV

2015

Vydáno

1. 4. 2015

Nakladatel

ČVUT, Fakulta elektrotechnická

Místo

Praha

ISSN

1210-2512

Periodikum

Radioengineering

Ročník

24

Číslo

1

Stát

Česká republika

Strany od

130

Strany do

136

Strany počet

7

BibTex

@article{BUT119531,
  author="PAŇKO, V. and BANÁŠ, S. and BURTON, R. and PTÁČEK, K. and DIVÍN, J. and DOBEŠ, J.",
  title="Enhanced Model of Nonlinear Spiral High Voltage Divider",
  journal="Radioengineering",
  year="2015",
  volume="24",
  number="1",
  pages="130--136",
  doi="10.13164/re.2015.0130",
  issn="1210-2512"
}