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PAVELKA, J. ŠIKULA, J. CHVÁTAL, M. TACANO, M.
Original Title
RTS Noise in MOSFETs: Mean Capture Time and Trap Position
Type
conference paper
Language
English
Original Abstract
RTS noise in MOSFETs is given by drain current fluctuation due to charge carrier capture and emission by a single active trap. From the drain voltage dependence of the ratio of capture tauC and emission tauE times the longitudinal trap position in the channel can be calculated. According to the Shockley-Read-Hall statistic, tauC is inversely proportional to the concentration of charge carriers n and in most noise papers, drain current ID is commonly supposed to be proportional to n and used to express concentration. Then we should expect tauC to decrease with increasing current, however, opposite dependence is usually experimentally found. In order to explain this discrepancy, we present a model of non-uniform charge carrier density distribution in channel with concentration decreasing towards the drain electrode.
Keywords
MOSFET; RTS noise; trap
Authors
PAVELKA, J.; ŠIKULA, J.; CHVÁTAL, M.; TACANO, M.
RIV year
2015
Released
9. 10. 2015
Publisher
IEEE
ISBN
978-1-4673-8335-6
Book
Noise and Fluctuations (ICNF)
Pages from
1
Pages to
4
Pages count
URL
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7288619
BibTex
@inproceedings{BUT120493, author="Jan {Pavelka} and Josef {Šikula} and Miloš {Chvátal} and Munecazu {Tacano}", title="RTS Noise in MOSFETs: Mean Capture Time and Trap Position ", booktitle="Noise and Fluctuations (ICNF)", year="2015", pages="1--4", publisher="IEEE", doi="10.1109/ICNF.2015.7288619", isbn="978-1-4673-8335-6", url="http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7288619" }