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PAVELKA, J. ŠIKULA, J. CHVÁTAL, M. TACANO, M.
Originální název
RTS Noise in MOSFETs: Mean Capture Time and Trap Position
Typ
článek ve sborníku ve WoS nebo Scopus
Jazyk
angličtina
Originální abstrakt
RTS noise in MOSFETs is given by drain current fluctuation due to charge carrier capture and emission by a single active trap. From the drain voltage dependence of the ratio of capture tauC and emission tauE times the longitudinal trap position in the channel can be calculated. According to the Shockley-Read-Hall statistic, tauC is inversely proportional to the concentration of charge carriers n and in most noise papers, drain current ID is commonly supposed to be proportional to n and used to express concentration. Then we should expect tauC to decrease with increasing current, however, opposite dependence is usually experimentally found. In order to explain this discrepancy, we present a model of non-uniform charge carrier density distribution in channel with concentration decreasing towards the drain electrode.
Klíčová slova
MOSFET; RTS noise; trap
Autoři
PAVELKA, J.; ŠIKULA, J.; CHVÁTAL, M.; TACANO, M.
Rok RIV
2015
Vydáno
9. 10. 2015
Nakladatel
IEEE
ISBN
978-1-4673-8335-6
Kniha
Noise and Fluctuations (ICNF)
Strany od
1
Strany do
4
Strany počet
URL
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7288619
BibTex
@inproceedings{BUT120493, author="Jan {Pavelka} and Josef {Šikula} and Miloš {Chvátal} and Munecazu {Tacano}", title="RTS Noise in MOSFETs: Mean Capture Time and Trap Position ", booktitle="Noise and Fluctuations (ICNF)", year="2015", pages="1--4", publisher="IEEE", doi="10.1109/ICNF.2015.7288619", isbn="978-1-4673-8335-6", url="http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7288619" }