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KHATEB, F. KULEJ, T. VLASSIS, S.
Original Title
Extremely low-voltage bulk-driven tunable transconductor
Type
journal article in Web of Science
Language
English
Original Abstract
A design solution for bulk-driven tunable transconductor capable to work under extremely low supply/consumption with rail-to-rail input common-mode range is presented in this work. The proposed transconductor topology consists of six bulk-driven CMOS inverters and it uses a very simple biasing circuit for the transconductance tuning. The design robustness was verified for 0.5 and 0.25 V power supplies offering the advantages of the current controlled input transconductance. For 0.5 V power supply the proposed transconductor has 0.075 to 10.2 µS transconductance tuning range, input referred intercept point IP3 = 1.81 V and 4.62 MHz bandwidth for 3 µA current consumption. The design robustness of the tunable transconductor was verified by means of computer simulation using triple-well 0.18 µm CMOS process.
Keywords
Bulk-driven technique; transconductor; Low-voltage Low-power MOS.
Authors
KHATEB, F.; KULEJ, T.; VLASSIS, S.
Released
24. 1. 2017
Publisher
SPRINGER BIRKHAUSER
Location
USA
ISBN
0278-081X
Periodical
CIRCUITS SYSTEMS AND SIGNAL PROCESSING
Year of study
2017 (36)
Number
2, IF: 1.694
State
United States of America
Pages from
511
Pages to
524
Pages count
14
URL
http://dx.doi.org/10.1007/s00034-016-0329-0
BibTex
@article{BUT124195, author="Fabian {Khateb} and Tomasz {Kulej} and Spyridon {Vlassis}", title="Extremely low-voltage bulk-driven tunable transconductor", journal="CIRCUITS SYSTEMS AND SIGNAL PROCESSING", year="2017", volume="2017 (36)", number="2, IF: 1.694", pages="511--524", doi="10.1007/s00034-016-0329-0", issn="0278-081X", url="http://dx.doi.org/10.1007/s00034-016-0329-0" }