Detail publikace

Extremely low-voltage bulk-driven tunable transconductor

KHATEB, F. KULEJ, T. VLASSIS, S.

Originální název

Extremely low-voltage bulk-driven tunable transconductor

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

A design solution for bulk-driven tunable transconductor capable to work under extremely low supply/consumption with rail-to-rail input common-mode range is presented in this work. The proposed transconductor topology consists of six bulk-driven CMOS inverters and it uses a very simple biasing circuit for the transconductance tuning. The design robustness was verified for 0.5 and 0.25 V power supplies offering the advantages of the current controlled input transconductance. For 0.5 V power supply the proposed transconductor has 0.075 to 10.2 µS transconductance tuning range, input referred intercept point IP3 = 1.81 V and 4.62 MHz bandwidth for 3 µA current consumption. The design robustness of the tunable transconductor was verified by means of computer simulation using triple-well 0.18 µm CMOS process.

Klíčová slova

Bulk-driven technique; transconductor; Low-voltage Low-power MOS.

Autoři

KHATEB, F.; KULEJ, T.; VLASSIS, S.

Vydáno

24. 1. 2017

Nakladatel

SPRINGER BIRKHAUSER

Místo

USA

ISSN

0278-081X

Periodikum

CIRCUITS SYSTEMS AND SIGNAL PROCESSING

Ročník

2017 (36)

Číslo

2, IF: 1.694

Stát

Spojené státy americké

Strany od

511

Strany do

524

Strany počet

14

URL

http://dx.doi.org/10.1007/s00034-016-0329-0

BibTex

@article{BUT124195,
  author="Fabian {Khateb} and Tomasz {Kulej} and Spyridon {Vlassis}",
  title="Extremely low-voltage bulk-driven tunable transconductor",
  journal="CIRCUITS SYSTEMS AND SIGNAL PROCESSING",
  year="2017",
  volume="2017 (36)",
  number="2,  IF: 1.694",
  pages="511--524",
  doi="10.1007/s00034-016-0329-0",
  issn="0278-081X",
  url="http://dx.doi.org/10.1007/s00034-016-0329-0"
}