Publication detail

Impact of the SiNX Thickness on Passivation Quality and Contact Resistivity of Silicon Solar Cell

MOJROVÁ, B. MIHAILETCHI, V.

Original Title

Impact of the SiNX Thickness on Passivation Quality and Contact Resistivity of Silicon Solar Cell

Type

conference paper

Language

English

Original Abstract

In this work the influence of thickness of Silicon Nitride (SiNX) layer deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD) on passivation quality and contact resis-tivity (ρC) of n-type Passivated Emitter Rear Totally-diffused (n-PERT) cell was investigated. The solar cell structure comprises front boron emitter and a phosphorous back surface field (BSF) with SiNX layers on both sides for surface passivation. Contacts are made by screen printed and fired through metallization using commercial silver (Ag) paste.

Keywords

Silicon Solar Cell; n-Type; n-PERT; SiNx; Passivation; Contact Resistivity.

Authors

MOJROVÁ, B.; MIHAILETCHI, V.

Released

28. 4. 2016

Publisher

Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií

Location

Brno

ISBN

978-80-214-5350-0

Book

Proceedings of the 22nd Conference STUDENT EEICT 2016

Pages from

690

Pages to

695

Pages count

5

BibTex

@inproceedings{BUT124312,
  author="Barbora {Mojrová} and Valentin {Mihailetchi}",
  title="Impact of the SiNX Thickness on Passivation Quality and Contact Resistivity of Silicon Solar Cell",
  booktitle="Proceedings of the 22nd Conference STUDENT EEICT 2016",
  year="2016",
  pages="690--695",
  publisher="Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií",
  address="Brno",
  isbn="978-80-214-5350-0"
}