Detail publikace

Impact of the SiNX Thickness on Passivation Quality and Contact Resistivity of Silicon Solar Cell

MOJROVÁ, B. MIHAILETCHI, V.

Originální název

Impact of the SiNX Thickness on Passivation Quality and Contact Resistivity of Silicon Solar Cell

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

In this work the influence of thickness of Silicon Nitride (SiNX) layer deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD) on passivation quality and contact resis-tivity (ρC) of n-type Passivated Emitter Rear Totally-diffused (n-PERT) cell was investigated. The solar cell structure comprises front boron emitter and a phosphorous back surface field (BSF) with SiNX layers on both sides for surface passivation. Contacts are made by screen printed and fired through metallization using commercial silver (Ag) paste.

Klíčová slova

Silicon Solar Cell; n-Type; n-PERT; SiNx; Passivation; Contact Resistivity.

Autoři

MOJROVÁ, B.; MIHAILETCHI, V.

Vydáno

28. 4. 2016

Nakladatel

Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií

Místo

Brno

ISBN

978-80-214-5350-0

Kniha

Proceedings of the 22nd Conference STUDENT EEICT 2016

Strany od

690

Strany do

695

Strany počet

5

BibTex

@inproceedings{BUT124312,
  author="Barbora {Mojrová} and Valentin {Mihailetchi}",
  title="Impact of the SiNX Thickness on Passivation Quality and Contact Resistivity of Silicon Solar Cell",
  booktitle="Proceedings of the 22nd Conference STUDENT EEICT 2016",
  year="2016",
  pages="690--695",
  publisher="Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií",
  address="Brno",
  isbn="978-80-214-5350-0"
}