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Publication detail
KUMNGERN, M. KHATEB, F.
Original Title
Fully Differential Difference Transconductance Amplifier Using FG-MOS Transistors
Type
conference paper
Language
English
Original Abstract
This paper presents a fully differential difference transconductance amplifier for applications to low-voltage and low-power analogue circuits. Differential difference input voltage can be obtained using floating-gate MOS transistor technique and it can be taken also the possibility of low supply voltage of the circuit. The proposed active building block has been simulated using TSMC 0.18 μm n-well CMOS technology. The circuit uses 0.4 V supply voltage and consumes a 27 μW of static power. A fully differential universal filter using proposed circuit as active device was presented as an example application.
Keywords
Floating-gate technique, fully differential difference transconductance amplifier, low-voltage and low-power circuit
Authors
KUMNGERN, M.; KHATEB, F.
RIV year
2015
Released
12. 11. 2015
Publisher
Institute of Electrical and Electronics Engineers Inc.
Location
Nusa Dua
ISBN
978-1-4673-6499-7
Book
2015 International Symposium on Intelligent Signal Processing and Communication Systems, ISPACS 2015
Pages from
337
Pages to
341
Pages count
5
URL
http://dx.doi.org/10.1109/ISPACS.2015.7432792
BibTex
@inproceedings{BUT125090, author="Montree {Kumngern} and Fabian {Khateb}", title="Fully Differential Difference Transconductance Amplifier Using FG-MOS Transistors", booktitle="2015 International Symposium on Intelligent Signal Processing and Communication Systems, ISPACS 2015", year="2015", pages="337--341", publisher="Institute of Electrical and Electronics Engineers Inc.", address="Nusa Dua", doi="10.1109/ISPACS.2015.7432792", isbn="978-1-4673-6499-7", url="http://dx.doi.org/10.1109/ISPACS.2015.7432792" }