Detail publikace

Fully Differential Difference Transconductance Amplifier Using FG-MOS Transistors

KUMNGERN, M. KHATEB, F.

Originální název

Fully Differential Difference Transconductance Amplifier Using FG-MOS Transistors

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

This paper presents a fully differential difference transconductance amplifier for applications to low-voltage and low-power analogue circuits. Differential difference input voltage can be obtained using floating-gate MOS transistor technique and it can be taken also the possibility of low supply voltage of the circuit. The proposed active building block has been simulated using TSMC 0.18 μm n-well CMOS technology. The circuit uses 0.4 V supply voltage and consumes a 27 μW of static power. A fully differential universal filter using proposed circuit as active device was presented as an example application.

Klíčová slova

Floating-gate technique, fully differential difference transconductance amplifier, low-voltage and low-power circuit

Autoři

KUMNGERN, M.; KHATEB, F.

Rok RIV

2015

Vydáno

12. 11. 2015

Nakladatel

Institute of Electrical and Electronics Engineers Inc.

Místo

Nusa Dua

ISBN

978-1-4673-6499-7

Kniha

2015 International Symposium on Intelligent Signal Processing and Communication Systems, ISPACS 2015

Strany od

337

Strany do

341

Strany počet

5

URL

http://dx.doi.org/10.1109/ISPACS.2015.7432792

BibTex

@inproceedings{BUT125090,
  author="Montree {Kumngern} and Fabian {Khateb}",
  title="Fully Differential Difference Transconductance Amplifier Using FG-MOS Transistors",
  booktitle="2015 International Symposium on Intelligent Signal Processing and Communication Systems, ISPACS 2015",
  year="2015",
  pages="337--341",
  publisher="Institute of Electrical and Electronics Engineers Inc.",
  address="Nusa Dua",
  doi="10.1109/ISPACS.2015.7432792",
  isbn="978-1-4673-6499-7",
  url="http://dx.doi.org/10.1109/ISPACS.2015.7432792"
}