Publication detail

Exploring Electron Transport and Memristive Switching in Nanoscale Au/WOx/W Multijunctions Based on Anodically Oxidized Al/W Metal Layers

BENDOVÁ, M. HUBÁLEK, J. MOZALEV, A.

Original Title

Exploring Electron Transport and Memristive Switching in Nanoscale Au/WOx/W Multijunctions Based on Anodically Oxidized Al/W Metal Layers

Type

journal article in Web of Science

Language

English

Original Abstract

An array of semiconducting tungsten-oxide (WOx) nanorods, 100 nm wide and 700 nm long, is synthesized via the porous-anodic-alumina-assisted anodization of tungsten on a substrate and is modified by annealing in air and vacuum. The rods buried in the alumina nanopores are self-anchored to the tungsten layer while their tops are interconnected via gold electrodeposited inside and over the pores. Thus formed metal/semiconductor/metal microdevices are used for studying electron transport within the nanorods and across the multiplied nanoscale Au/WOx and W/WOx interfaces. The dominating effect of a Schottky junction that forms at the Au/WOx interface is justified for the as-anodized and air-annealed nanorods tested at room temperature, which transforms into an ohmic contact at elevated temperature, whereas the bottom W/WOx interface turns out to be Schottky-like and govern the electron transport, giving a higher barrier and a set of pronounced diode-like characteristics in the as-anodized nanoarrays. The amorphous nanorods reveal bipolar resistive switching with a gradual reset due to the field-driven movement of oxygen vacancies and induced modifications of the Au/WOx Schottky interface. The unique electrical and interfacial properties of the nanoscale Au/WOx/W multijunctions form a basis for their application in emerging resistive random access memories or 3D gas-sensing nanodevices.

Keywords

tungsten oxide; porous anodic alumina; anodizing; electron transport; memristive switching

Authors

BENDOVÁ, M.; HUBÁLEK, J.; MOZALEV, A.

Released

6. 10. 2016

Publisher

WILEY-VCH Verlag GmbH & Co

Location

Weinheim

ISBN

2196-7350

Periodical

Advanced Materials Interfaces

Year of study

3

Number

19

State

Federal Republic of Germany

Pages from

1600512

Pages to

1600524

Pages count

12

URL

http://onlinelibrary.wiley.com/doi/10.1002/admi.201600512/abstract

Full text in the Digital Library

http://hdl.handle.net/11012/180698

BibTex

@article{BUT128900,
  author="Mária {Bendová} and Jaromír {Hubálek} and Alexander {Mozalev}",
  title="Exploring Electron Transport and Memristive Switching in Nanoscale Au/WOx/W Multijunctions Based on Anodically Oxidized Al/W Metal Layers",
  journal="Advanced Materials Interfaces",
  year="2016",
  volume="3",
  number="19",
  pages="1600512--1600524",
  doi="10.1002/admi.201600512",
  issn="2196-7350",
  url="http://onlinelibrary.wiley.com/doi/10.1002/admi.201600512/abstract"
}