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BENDOVÁ, M. HUBÁLEK, J. MOZALEV, A.
Originální název
Exploring Electron Transport and Memristive Switching in Nanoscale Au/WOx/W Multijunctions Based on Anodically Oxidized Al/W Metal Layers
Typ
článek v časopise ve Web of Science, Jimp
Jazyk
angličtina
Originální abstrakt
An array of semiconducting tungsten-oxide (WOx) nanorods, 100 nm wide and 700 nm long, is synthesized via the porous-anodic-alumina-assisted anodization of tungsten on a substrate and is modified by annealing in air and vacuum. The rods buried in the alumina nanopores are self-anchored to the tungsten layer while their tops are interconnected via gold electrodeposited inside and over the pores. Thus formed metal/semiconductor/metal microdevices are used for studying electron transport within the nanorods and across the multiplied nanoscale Au/WOx and W/WOx interfaces. The dominating effect of a Schottky junction that forms at the Au/WOx interface is justified for the as-anodized and air-annealed nanorods tested at room temperature, which transforms into an ohmic contact at elevated temperature, whereas the bottom W/WOx interface turns out to be Schottky-like and govern the electron transport, giving a higher barrier and a set of pronounced diode-like characteristics in the as-anodized nanoarrays. The amorphous nanorods reveal bipolar resistive switching with a gradual reset due to the field-driven movement of oxygen vacancies and induced modifications of the Au/WOx Schottky interface. The unique electrical and interfacial properties of the nanoscale Au/WOx/W multijunctions form a basis for their application in emerging resistive random access memories or 3D gas-sensing nanodevices.
Klíčová slova
tungsten oxide; porous anodic alumina; anodizing; electron transport; memristive switching
Autoři
BENDOVÁ, M.; HUBÁLEK, J.; MOZALEV, A.
Vydáno
6. 10. 2016
Nakladatel
WILEY-VCH Verlag GmbH & Co
Místo
Weinheim
ISSN
2196-7350
Periodikum
Advanced Materials Interfaces
Ročník
3
Číslo
19
Stát
Spolková republika Německo
Strany od
1600512
Strany do
1600524
Strany počet
12
URL
http://onlinelibrary.wiley.com/doi/10.1002/admi.201600512/abstract
Plný text v Digitální knihovně
http://hdl.handle.net/11012/180698
BibTex
@article{BUT128900, author="Mária {Bendová} and Jaromír {Hubálek} and Alexander {Mozalev}", title="Exploring Electron Transport and Memristive Switching in Nanoscale Au/WOx/W Multijunctions Based on Anodically Oxidized Al/W Metal Layers", journal="Advanced Materials Interfaces", year="2016", volume="3", number="19", pages="1600512--1600524", doi="10.1002/admi.201600512", issn="2196-7350", url="http://onlinelibrary.wiley.com/doi/10.1002/admi.201600512/abstract" }