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PROCHÁZKA, P. MAREČEK, D. LIŠKOVÁ, Z. ČECHAL, J. ŠIKOLA, T.
Original Title
X-ray induced electrostatic graphene doping via defect charging in gate dielectric
Type
journal article in Web of Science
Language
English
Original Abstract
Graphene field effect transistors are becoming an integral part of advanced devices. Hence, the advanced strategies for both characterization and tuning of graphene properties are required. Here we show that the X-ray irradiation at the zero applied gate voltage causes very strong negative doping of graphene, which is explained by X-ray radiation induced charging of defects in the gate dielectric. The induced charge can be neutralized and compensated if the graphene device is irradiated by X-rays at a negative gate voltage. Here the charge neutrality point shifts back to zero voltage. The observed phenomenon has strong implications for interpretation of X-ray based measurements of graphene devices as it renders them to significantly altered state. Our results also form a basis for remote X-ray tuning of graphene transport properties and X-ray sensors comprising the graphene/oxide interface as an active layer
Keywords
Graphene, Field effect transistor, X-rays, Charged defects, Gate dielectrics
Authors
PROCHÁZKA, P.; MAREČEK, D.; LIŠKOVÁ, Z.; ČECHAL, J.; ŠIKOLA, T.
Released
3. 4. 2017
Publisher
NPG
ISBN
2045-2322
Periodical
Scientific Reports
Year of study
7
Number
1
State
United Kingdom of Great Britain and Northern Ireland
Pages from
Pages to
Pages count
URL
https://www.nature.com/articles/s41598-017-00673-z
Full text in the Digital Library
http://hdl.handle.net/11012/64752
BibTex
@article{BUT134874, author="Pavel {Procházka} and David {Mareček} and Zuzana {Lišková} and Jan {Čechal} and Tomáš {Šikola}", title="X-ray induced electrostatic graphene doping via defect charging in gate dielectric", journal="Scientific Reports", year="2017", volume="7", number="1", pages="1--7", doi="10.1038/s41598-017-00673-z", issn="2045-2322", url="https://www.nature.com/articles/s41598-017-00673-z" }