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PROCHÁZKA, P. MAREČEK, D. LIŠKOVÁ, Z. ČECHAL, J. ŠIKOLA, T.
Originální název
X-ray induced electrostatic graphene doping via defect charging in gate dielectric
Typ
článek v časopise ve Web of Science, Jimp
Jazyk
angličtina
Originální abstrakt
Graphene field effect transistors are becoming an integral part of advanced devices. Hence, the advanced strategies for both characterization and tuning of graphene properties are required. Here we show that the X-ray irradiation at the zero applied gate voltage causes very strong negative doping of graphene, which is explained by X-ray radiation induced charging of defects in the gate dielectric. The induced charge can be neutralized and compensated if the graphene device is irradiated by X-rays at a negative gate voltage. Here the charge neutrality point shifts back to zero voltage. The observed phenomenon has strong implications for interpretation of X-ray based measurements of graphene devices as it renders them to significantly altered state. Our results also form a basis for remote X-ray tuning of graphene transport properties and X-ray sensors comprising the graphene/oxide interface as an active layer
Klíčová slova
Graphene, Field effect transistor, X-rays, Charged defects, Gate dielectrics
Autoři
PROCHÁZKA, P.; MAREČEK, D.; LIŠKOVÁ, Z.; ČECHAL, J.; ŠIKOLA, T.
Vydáno
3. 4. 2017
Nakladatel
NPG
ISSN
2045-2322
Periodikum
Scientific Reports
Ročník
7
Číslo
1
Stát
Spojené království Velké Británie a Severního Irska
Strany od
Strany do
Strany počet
URL
https://www.nature.com/articles/s41598-017-00673-z
Plný text v Digitální knihovně
http://hdl.handle.net/11012/64752
BibTex
@article{BUT134874, author="Pavel {Procházka} and David {Mareček} and Zuzana {Lišková} and Jan {Čechal} and Tomáš {Šikola}", title="X-ray induced electrostatic graphene doping via defect charging in gate dielectric", journal="Scientific Reports", year="2017", volume="7", number="1", pages="1--7", doi="10.1038/s41598-017-00673-z", issn="2045-2322", url="https://www.nature.com/articles/s41598-017-00673-z" }