Publication detail

A comparison study of boron emitter passivation by silicon oxide and a PECVD silicon nitride stack

MOJROVÁ, B. CHU, H. PETER, C. PREIS, P. LOSSEN, J. MIHAILETCHI, V. KOPECEK, R.

Original Title

A comparison study of boron emitter passivation by silicon oxide and a PECVD silicon nitride stack

Type

journal article in Web of Science

Language

English

Original Abstract

In this study we investigated the passivation quality of boron doped emitters by varying the composition of SiO2/SiNX stack layers. For this purpose, n-PERT (passivated emitter, rear totally-diffused) solar cells with boron doped front side emitter and phosphorous doped back-surface-field (BSF), as well as symmetrical boron doped structures, were fabricated on 6-inch n-type wafers.

Keywords

solar cell, n-type, passivation, boron emitter, NAOS

Authors

MOJROVÁ, B.; CHU, H.; PETER, C.; PREIS, P.; LOSSEN, J.; MIHAILETCHI, V.; KOPECEK, R.

Released

1. 9. 2017

ISBN

1876-6102

Periodical

Energy Procedia

Number

124

State

Kingdom of Thailand

Pages from

288

Pages to

294

Pages count

952

BibTex

@article{BUT141006,
  author="Barbora {Mojrová} and Haifeng {Chu} and Christop {Peter} and Pirmin {Preis} and Jan {Lossen} and Valentin {Mihailetchi} and Radovan {Kopecek}",
  title="A comparison study of boron emitter passivation by silicon oxide and a PECVD silicon nitride stack",
  journal="Energy Procedia",
  year="2017",
  number="124",
  pages="288--294",
  doi="10.1016/j.egypro.2017.09.301",
  issn="1876-6102"
}