Detail publikace

A comparison study of boron emitter passivation by silicon oxide and a PECVD silicon nitride stack

MOJROVÁ, B. CHU, H. PETER, C. PREIS, P. LOSSEN, J. MIHAILETCHI, V. KOPECEK, R.

Originální název

A comparison study of boron emitter passivation by silicon oxide and a PECVD silicon nitride stack

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

In this study we investigated the passivation quality of boron doped emitters by varying the composition of SiO2/SiNX stack layers. For this purpose, n-PERT (passivated emitter, rear totally-diffused) solar cells with boron doped front side emitter and phosphorous doped back-surface-field (BSF), as well as symmetrical boron doped structures, were fabricated on 6-inch n-type wafers.

Klíčová slova

solar cell, n-type, passivation, boron emitter, NAOS

Autoři

MOJROVÁ, B.; CHU, H.; PETER, C.; PREIS, P.; LOSSEN, J.; MIHAILETCHI, V.; KOPECEK, R.

Vydáno

1. 9. 2017

ISSN

1876-6102

Periodikum

Energy Procedia

Číslo

124

Stát

Thajské království

Strany od

288

Strany do

294

Strany počet

952

BibTex

@article{BUT141006,
  author="Barbora {Mojrová} and Haifeng {Chu} and Christop {Peter} and Pirmin {Preis} and Jan {Lossen} and Valentin {Mihailetchi} and Radovan {Kopecek}",
  title="A comparison study of boron emitter passivation by silicon oxide and a PECVD silicon nitride stack",
  journal="Energy Procedia",
  year="2017",
  number="124",
  pages="288--294",
  doi="10.1016/j.egypro.2017.09.301",
  issn="1876-6102"
}