Publication detail

MOS Capacitors

SUTORÝ, T.

Original Title

MOS Capacitors

Type

conference paper

Language

English

Original Abstract

For economical reason, it is highly desirable to implement the analog part of mainly digital system on chip in standard CMOS process. The advantages are low cost and area requirements, the disadvantages are non-linear C-V characteristics and problems resulting from it. This paper describes possibilities of using standard MOSFET gate structure as capacitor.

Key words in English

CMOS process, non-linear C-V characteristic, MOSFET gate, MOS capacitor.

Authors

SUTORÝ, T.

RIV year

2004

Released

1. 1. 2004

Publisher

Ing. Zdeněk Novotný CSc., Ondráčkova 105, Brno

Location

Brno

ISBN

80-214-2636-5

Book

Proceedings of the10th conference and competition Student EEICT 2004 Volume 3

Edition number

první

Pages from

684

Pages to

688

Pages count

5

BibTex

@inproceedings{BUT14110,
  author="Tomáš {Sutorý}",
  title="MOS Capacitors",
  booktitle="Proceedings of the10th conference and competition Student EEICT 2004 Volume 3",
  year="2004",
  volume="první",
  number="první",
  pages="5",
  publisher="Ing. Zdeněk Novotný CSc., Ondráčkova 105, Brno",
  address="Brno",
  isbn="80-214-2636-5"
}