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Publication detail
Martin Blaha
Original Title
Low Frequency in submicron MOSFET
Type
conference paper
Language
English
Original Abstract
This work discusses about Low-Frequenci Noise in the Metal-Oxide Semiconductor (MOS) system. Is describe the current-voltage and noise characteristic of an ultrahin oxide capacitor. In the concluding chapter is describe Impact of gate oxide breakdown on the noise of MOSFETs
Keywords
MOSFET, RTS noise, capacitance.
Authors
RIV year
2005
Released
28. 4. 2005
Location
Brno
ISBN
80-214-2889-9
Book
Student eeict 2005
Pages from
198
Pages to
201
Pages count
4
BibTex
@inproceedings{BUT14556, author="Martin {Bláha}", title="Low Frequency in submicron MOSFET", booktitle="Student eeict 2005", year="2005", volume="11", pages="4", address="Brno", isbn="80-214-2889-9" }