Detail publikace

Low Frequency in submicron MOSFET

Martin Blaha

Originální název

Low Frequency in submicron MOSFET

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

This work discusses about Low-Frequenci Noise in the Metal-Oxide Semiconductor (MOS) system. Is describe the current-voltage and noise characteristic of an ultrahin oxide capacitor. In the concluding chapter is describe Impact of gate oxide breakdown on the noise of MOSFETs

Klíčová slova

MOSFET, RTS noise, capacitance.

Autoři

Martin Blaha

Rok RIV

2005

Vydáno

28. 4. 2005

Místo

Brno

ISBN

80-214-2889-9

Kniha

Student eeict 2005

Strany od

198

Strany do

201

Strany počet

4

BibTex

@inproceedings{BUT14556,
  author="Martin {Bláha}",
  title="Low Frequency in submicron MOSFET",
  booktitle="Student eeict 2005",
  year="2005",
  volume="11",
  pages="4",
  address="Brno",
  isbn="80-214-2889-9"
}