Publication detail

MEASUREMENT METHOD FOR THE DYNAMIC ON-STATE RESISTANCE OF GAN SEMICONDUCTORS

ŠÍR, M. FEŇO, I.

Original Title

MEASUREMENT METHOD FOR THE DYNAMIC ON-STATE RESISTANCE OF GAN SEMICONDUCTORS

Type

conference paper

Language

English

Original Abstract

Defects in material structure effects the ON-state resistance of GaN devices, which can’t be considered constant in power loss evaluation when considering high operating frequency. The aim of this article is to propose a novel method to measure the dynamic RDSon. The method resolves a typical disadvantage of former methods e.g. an unclear clamping diode voltage drop in former approaches. Test results obtained with the new method are presented for 3 samples provided by different suppliers. Results shows that each sample exhibits a different dynamic RDSon characteristics what indicates a different process technology used to manufacture the device.

Keywords

GaN semiconductor, Novel RDSon Measurement method, Dynamic On state resistance, Dynamic RDSon

Authors

ŠÍR, M.; FEŇO, I.

Released

25. 11. 2019

Publisher

IEEE

Location

2018 2nd European Conference on Electrical Engineering and Computer Science (EECS)

ISBN

978-1-7281-1929-8

Book

2018 2nd European Conference on Electrical Engineering and Computer Science (EECS)

Pages from

543

Pages to

546

Pages count

4

URL

https://ieeexplore.ieee.org/document/8910040

BibTex

@inproceedings{BUT155364,
  author="ŠÍR, M. and FEŇO, I.",
  title="MEASUREMENT METHOD FOR THE DYNAMIC ON-STATE RESISTANCE OF GAN SEMICONDUCTORS",
  booktitle="2018 2nd European Conference on Electrical Engineering and Computer Science (EECS)",
  year="2019",
  pages="543--546",
  publisher="IEEE",
  address="2018 2nd European Conference on Electrical Engineering and Computer Science (EECS)",
  doi="10.1109/EECS.2018.00106",
  isbn="978-1-7281-1929-8",
  url="https://ieeexplore.ieee.org/document/8910040"
}