Publication detail

Dependence of Hooge constant on mean free path of materials

TACANO, M. PAVELKA, J. TANUMA, N. YOKOKURA, S. HASHIGUCHI, S.

Original Title

Dependence of Hooge constant on mean free path of materials

Type

conference paper

Language

English

Original Abstract

The Hooge parameters of compound semiconductors are found to be in inverse proportional to the mean free paths of materials. The newly developed model of 1/f phonon energy partition fluctuation in thermal equilibrium predicts the value of Hooge parameter as alfaH = a/lambda, the ratio of the lattice constant a and the mean free path lambda. Several reported experimental results on alfaH for very pure semiconductors are found on the a/lambda line. Experimental verification is given by measuring noise in InGaAs/InAlAs heterostructure, where optical phonon effects can be observed due to negligible impurity scattering. The Hooge parameter of about 1 in p-InGaAs and 10-3 to 10-5 in n-InGaAs reflects the two order difference in the mobility and corresponding lambda values.

Keywords

InGaAs, 1/f noise

Authors

TACANO, M.; PAVELKA, J.; TANUMA, N.; YOKOKURA, S.; HASHIGUCHI, S.

Released

1. 1. 2004

Publisher

The Society of Photo-Optical Instrumentation Engineers

Location

USA

ISBN

0-8194-5392-7

Book

Proc. of 2nd SPIE Symposium Fluctuation and Noise in Materials

Pages from

310

Pages to

319

Pages count

10

BibTex

@inproceedings{BUT16518,
  author="Munecazu {Tacano} and Jan {Pavelka} and Nobuhisa {Tanuma} and Saburo {Yokokura} and Sumihisa {Hashiguchi}",
  title="Dependence of Hooge constant on mean free path of materials",
  booktitle="Proc. of 2nd SPIE Symposium Fluctuation and Noise in Materials",
  year="2004",
  pages="10",
  publisher="The Society of Photo-Optical Instrumentation Engineers",
  address="USA",
  isbn="0-8194-5392-7"
}