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TACANO, M.; PAVELKA, J.; TANUMA, N.; YOKOKURA, S.; HASHIGUCHI, S.
Originální název
Dependence of Hooge constant on mean free path of materials
Anglický název
Druh
Stať ve sborníku v databázi WoS či Scopus
Originální abstrakt
The Hooge parameters of compound semiconductors are found to be in inverse proportional to the mean free paths of materials. The newly developed model of 1/f phonon energy partition fluctuation in thermal equilibrium predicts the value of Hooge parameter as alfaH = a/lambda, the ratio of the lattice constant a and the mean free path lambda. Several reported experimental results on alfaH for very pure semiconductors are found on the a/lambda line. Experimental verification is given by measuring noise in InGaAs/InAlAs heterostructure, where optical phonon effects can be observed due to negligible impurity scattering. The Hooge parameter of about 1 in p-InGaAs and 10-3 to 10-5 in n-InGaAs reflects the two order difference in the mobility and corresponding lambda values.
Anglický abstrakt
Klíčová slova
InGaAs, 1/f noise
Klíčová slova v angličtině
Autoři
Vydáno
01.01.2004
Nakladatel
The Society of Photo-Optical Instrumentation Engineers
Místo
USA
ISBN
0-8194-5392-7
Kniha
Proc. of 2nd SPIE Symposium Fluctuation and Noise in Materials
Strany od
310
Strany počet
10
BibTex
@inproceedings{BUT16518, author="Munecazu {Tacano} and Jan {Pavelka} and Nobuhisa {Tanuma} and Saburo {Yokokura} and Sumihisa {Hashiguchi}", title="Dependence of Hooge constant on mean free path of materials", booktitle="Proc. of 2nd SPIE Symposium Fluctuation and Noise in Materials", year="2004", pages="10", publisher="The Society of Photo-Optical Instrumentation Engineers", address="USA", isbn="0-8194-5392-7" }