Publication detail

Analysis and Measurement of IM3 Anomalies in Single- and Double-Band Low-Noise Amplifiers

DOBEŠ, J. MÍCHAL, J. NAVRÁTIL, V. KOLKA, Z.

Original Title

Analysis and Measurement of IM3 Anomalies in Single- and Double-Band Low-Noise Amplifiers

Type

conference paper

Language

English

Original Abstract

In the paper, a theoretical background of the unexpected third-order intermodulation power decrease at some levels of input power is discussed first. This anomaly can be partially explained by various physical phenomena, RF stress, e.g., as shown in the state-of-the-art review in the paper. Then a simulation of the IM3 dependency is performed, including a comparison between the computed and measured IP3 points. Finally the single- and double-band low-noise amplifiers designed by multi-objective optimization are measured from this point of view, and a frequency dependence of the IM3 anomalies is demonstrated. An improved optimization method is defined too.

Keywords

Low-noise amplifier; pHEMT, multi-objective; optimization; goal attainment method; single- and double-band amplifier; third-order intermodulation products; IM3; IP3 point

Authors

DOBEŠ, J.; MÍCHAL, J.; NAVRÁTIL, V.; KOLKA, Z.

Released

14. 12. 2020

Publisher

IEEE

Location

Kuala Lumpur, Malaysia

ISBN

978-1-7281-8208-7

Book

Proceedings of the 2020 IEEE International RF & Microwave Conference (RFM)

Pages from

1

Pages to

4

Pages count

4

BibTex

@inproceedings{BUT167657,
  author="Josef {Dobeš} and Jan {Míchal} and Václav {Navrátil} and Zdeněk {Kolka}",
  title="Analysis and Measurement of IM3 Anomalies in Single- and Double-Band Low-Noise Amplifiers",
  booktitle="Proceedings of the 2020 IEEE International RF & Microwave Conference (RFM)",
  year="2020",
  pages="1--4",
  publisher="IEEE",
  address="Kuala Lumpur, Malaysia",
  doi="10.1109/RFM50841.2020.9344764",
  isbn="978-1-7281-8208-7"
}