Detail publikace

Analysis and Measurement of IM3 Anomalies in Single- and Double-Band Low-Noise Amplifiers

DOBEŠ, J. MÍCHAL, J. NAVRÁTIL, V. KOLKA, Z.

Originální název

Analysis and Measurement of IM3 Anomalies in Single- and Double-Band Low-Noise Amplifiers

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

In the paper, a theoretical background of the unexpected third-order intermodulation power decrease at some levels of input power is discussed first. This anomaly can be partially explained by various physical phenomena, RF stress, e.g., as shown in the state-of-the-art review in the paper. Then a simulation of the IM3 dependency is performed, including a comparison between the computed and measured IP3 points. Finally the single- and double-band low-noise amplifiers designed by multi-objective optimization are measured from this point of view, and a frequency dependence of the IM3 anomalies is demonstrated. An improved optimization method is defined too.

Klíčová slova

Low-noise amplifier; pHEMT, multi-objective; optimization; goal attainment method; single- and double-band amplifier; third-order intermodulation products; IM3; IP3 point

Autoři

DOBEŠ, J.; MÍCHAL, J.; NAVRÁTIL, V.; KOLKA, Z.

Vydáno

14. 12. 2020

Nakladatel

IEEE

Místo

Kuala Lumpur, Malaysia

ISBN

978-1-7281-8208-7

Kniha

Proceedings of the 2020 IEEE International RF & Microwave Conference (RFM)

Strany od

1

Strany do

4

Strany počet

4

BibTex

@inproceedings{BUT167657,
  author="Josef {Dobeš} and Jan {Míchal} and Václav {Navrátil} and Zdeněk {Kolka}",
  title="Analysis and Measurement of IM3 Anomalies in Single- and Double-Band Low-Noise Amplifiers",
  booktitle="Proceedings of the 2020 IEEE International RF & Microwave Conference (RFM)",
  year="2020",
  pages="1--4",
  publisher="IEEE",
  address="Kuala Lumpur, Malaysia",
  doi="10.1109/RFM50841.2020.9344764",
  isbn="978-1-7281-8208-7"
}