Publication detail

The impact of Ir doping on the electrical properties of YbFe1-xIrxO3 perovskite-oxide compounds

COSKUN, M. POLAT, Ö. COSKUN, F. KURT, B. DURMUS, Z. CAGLAR, M. TURUT, A.

Original Title

The impact of Ir doping on the electrical properties of YbFe1-xIrxO3 perovskite-oxide compounds

Type

journal article in Web of Science

Language

English

Original Abstract

In this study, YbFe1-xIrxO3 (x = 0, 0.01, 0.10) compounds were synthesized by solid-state reaction method. Chemical and structural analyses of studied compounds were carried out by XPS, SEM and EDX methods. SEM and STEM studies have shown that the particle size shrinks as doping ratio increases. Electrical/dielectric properties of the synthesized compounds were performed in wide-range frequency (1-10(7) Hz) and temperature (between - 100 and 100 degrees C with 20 degrees C steps) using Novocontrol Dielectric/Impedance Spectrometer. Frequency-dependent loss tangent plots exhibited that three dielectric relaxations take place for undoped YbFeO3 (YbFO) compound, whereas two dielectric relaxations were observed for 1 and 10 mol% Ir-doped YbFO compounds. Resistivity measurement revealed that the 1 mol% Ir-substituted YbFO has lower resistivity than undoped.

Keywords

DIELECTRIC-PROPERTIES; IMPEDANCE SPECTROSCOPY; MAGNETIC-PROPERTIES; TRANSITION; CO

Authors

COSKUN, M.; POLAT, Ö.; COSKUN, F.; KURT, B.; DURMUS, Z.; CAGLAR, M.; TURUT, A.

Released

1. 1. 2020

Publisher

SPRINGER

Location

DORDRECHT

ISBN

0957-4522

Periodical

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Year of study

31

Number

2

State

Kingdom of the Netherlands

Pages from

1731

Pages to

1744

Pages count

14

URL

https://link.springer.com/article/10.1007/s10854-019-02691-1

BibTex

@article{BUT168915,
  author="Mustafa {Coskun} and Özgür {Polat} and F.M. {Coskun} and B. Zengin {Kurt} and Zerrin Gurel {Durmus} and Mujdat {Caglar} and Abduelmecit {Turut}",
  title="The impact of Ir doping on the electrical properties of YbFe1-xIrxO3 perovskite-oxide compounds",
  journal="JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS",
  year="2020",
  volume="31",
  number="2",
  pages="1731--1744",
  doi="10.1007/s10854-019-02691-1",
  issn="0957-4522",
  url="https://link.springer.com/article/10.1007/s10854-019-02691-1"
}