Detail publikace

The impact of Ir doping on the electrical properties of YbFe1-xIrxO3 perovskite-oxide compounds

COSKUN, M. POLAT, Ö. COSKUN, F. KURT, B. DURMUS, Z. CAGLAR, M. TURUT, A.

Originální název

The impact of Ir doping on the electrical properties of YbFe1-xIrxO3 perovskite-oxide compounds

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

In this study, YbFe1-xIrxO3 (x = 0, 0.01, 0.10) compounds were synthesized by solid-state reaction method. Chemical and structural analyses of studied compounds were carried out by XPS, SEM and EDX methods. SEM and STEM studies have shown that the particle size shrinks as doping ratio increases. Electrical/dielectric properties of the synthesized compounds were performed in wide-range frequency (1-10(7) Hz) and temperature (between - 100 and 100 degrees C with 20 degrees C steps) using Novocontrol Dielectric/Impedance Spectrometer. Frequency-dependent loss tangent plots exhibited that three dielectric relaxations take place for undoped YbFeO3 (YbFO) compound, whereas two dielectric relaxations were observed for 1 and 10 mol% Ir-doped YbFO compounds. Resistivity measurement revealed that the 1 mol% Ir-substituted YbFO has lower resistivity than undoped.

Klíčová slova

DIELECTRIC-PROPERTIES; IMPEDANCE SPECTROSCOPY; MAGNETIC-PROPERTIES; TRANSITION; CO

Autoři

COSKUN, M.; POLAT, Ö.; COSKUN, F.; KURT, B.; DURMUS, Z.; CAGLAR, M.; TURUT, A.

Vydáno

1. 1. 2020

Nakladatel

SPRINGER

Místo

DORDRECHT

ISSN

0957-4522

Periodikum

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Ročník

31

Číslo

2

Stát

Nizozemsko

Strany od

1731

Strany do

1744

Strany počet

14

URL

https://link.springer.com/article/10.1007/s10854-019-02691-1

BibTex

@article{BUT168915,
  author="Mustafa {Coskun} and Özgür {Polat} and F.M. {Coskun} and B. Zengin {Kurt} and Zerrin Gurel {Durmus} and Mujdat {Caglar} and Abduelmecit {Turut}",
  title="The impact of Ir doping on the electrical properties of YbFe1-xIrxO3 perovskite-oxide compounds",
  journal="JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS",
  year="2020",
  volume="31",
  number="2",
  pages="1731--1744",
  doi="10.1007/s10854-019-02691-1",
  issn="0957-4522",
  url="https://link.springer.com/article/10.1007/s10854-019-02691-1"
}