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Mohelský, I. Dubroka, A. Wyzula, J. Slobodeniuk, A. Martinez, G. Krupko, Y. Piot, B. A. Caha, O. Humlíček, J. Bauer, G. Springholz, G. Orlita, M.
Original Title
Landau level spectroscopy of Bi2Te3
Type
journal article in Web of Science
Language
English
Original Abstract
Here we report on Landau level spectroscopy in magnetic fields up to 34 T performed on a thin film of the topological insulator Bi2Te3 epitaxially grown on a BaF2 substrate. The observed response is consistent with the picture of a direct-gap semiconductor in which charge carriers closely resemble massive Dirac particles. The fundamental band gap reaches E-g = (175 +/- 5) meV at low temperatures and it is not located on the trigonal axis, thus displaying either sixfold or twelvefold valley degeneracy. Interestingly, our magneto-optical data do not indicate any band inversion at the direct gap. This suggests that the fundamental band gap is relatively distant from the Gamma point where profound inversion exists and gives rise to the relativisticlike surface states of Bi2Te3.
Keywords
BISMUTH TELLURIDE; TOPOLOGICAL INSULATORS; THERMOELECTRIC PROPERTIES; CONDUCTION ELECTRONS; OPTICAL-PROPERTIES; VALENCE-BAND; BI2SE3; SB2TE3; ABSORPTION; RESONANCE
Authors
Mohelský, I.; Dubroka, A.; Wyzula, J.; Slobodeniuk, A.; Martinez, G.; Krupko, Y.; Piot, B. A.; Caha, O.; Humlíček, J.; Bauer, G.; Springholz, G.; Orlita, M.
Released
7. 8. 2020
Publisher
AMER PHYSICAL SOC
Location
COLLEGE PK
ISBN
1095-3795
Periodical
Physical Review B
Year of study
102
Number
8
State
United States of America
Pages from
085201-1
Pages to
085201-11
Pages count
11
URL
https://journals.aps.org/prb/abstract/10.1103/PhysRevB.102.085201