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GABLECH, I. BRODSKÝ, J. VYROUBAL, P. PIASTEK, J. BARTOŠÍK, M. PEKÁREK, J.
Original Title
Mechanical strain and electric-field modulation of graphene transistors integrated on MEMS cantilevers
Type
journal article in Web of Science
Language
English
Original Abstract
This work proposes a structure which allows characterization of graphene monolayers under combined electric field and mechanical strain modulation. Our approach is based on a cantilever integrated into a two-dimensional graphene-based field effect transistor (FET). This allows us to change graphene properties either separately or together via two methods. The first way involves electric field induced by the gate. The second is induction of mechanical strain caused by external force pushing the cantilever up or down. We fabricated devices using silicon-on-insulator wafer with practically zero value of residual stress and a high‑ quality dielectric layer which allowed us to precisely characterize structures using both mentioned stimuli. We used the electric field/strain interplay to control resistivity and position of the charge neutrality point often described as the Dirac point of graphene. Furthermore, values of cantilever to bend after the structure is released. Our device demonstrates a novel method of tuning the physical properties of graphene in silicon and/or complementary metal‑oxide‑semiconductor technology, and is thus promising for tunable physical or chemical sensors.
Keywords
graphene FET, MEMS, cantilever, strain, stress
Authors
GABLECH, I.; BRODSKÝ, J.; VYROUBAL, P.; PIASTEK, J.; BARTOŠÍK, M.; PEKÁREK, J.
Released
6. 1. 2022
Publisher
Springer US
Location
New York
ISBN
0022-2461
Periodical
Journal of Materials Science
Year of study
57
Number
3
State
United States of America
Pages from
1923
Pages to
1935
Pages count
13
URL
https://link.springer.com/article/10.1007/s10853-021-06846-6
BibTex
@article{BUT175593, author="Imrich {Gablech} and Jan {Brodský} and Petr {Vyroubal} and Jakub {Piastek} and Miroslav {Bartošík} and Jan {Pekárek}", title="Mechanical strain and electric-field modulation of graphene transistors integrated on MEMS cantilevers", journal="Journal of Materials Science", year="2022", volume="57", number="3", pages="1923--1935", doi="10.1007/s10853-021-06846-6", issn="0022-2461", url="https://link.springer.com/article/10.1007/s10853-021-06846-6" }