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GABLECH, I. BRODSKÝ, J. VYROUBAL, P. PIASTEK, J. BARTOŠÍK, M. PEKÁREK, J.
Originální název
Mechanical strain and electric-field modulation of graphene transistors integrated on MEMS cantilevers
Typ
článek v časopise ve Web of Science, Jimp
Jazyk
angličtina
Originální abstrakt
This work proposes a structure which allows characterization of graphene monolayers under combined electric field and mechanical strain modulation. Our approach is based on a cantilever integrated into a two-dimensional graphene-based field effect transistor (FET). This allows us to change graphene properties either separately or together via two methods. The first way involves electric field induced by the gate. The second is induction of mechanical strain caused by external force pushing the cantilever up or down. We fabricated devices using silicon-on-insulator wafer with practically zero value of residual stress and a high‑ quality dielectric layer which allowed us to precisely characterize structures using both mentioned stimuli. We used the electric field/strain interplay to control resistivity and position of the charge neutrality point often described as the Dirac point of graphene. Furthermore, values of cantilever to bend after the structure is released. Our device demonstrates a novel method of tuning the physical properties of graphene in silicon and/or complementary metal‑oxide‑semiconductor technology, and is thus promising for tunable physical or chemical sensors.
Klíčová slova
graphene FET, MEMS, cantilever, strain, stress
Autoři
GABLECH, I.; BRODSKÝ, J.; VYROUBAL, P.; PIASTEK, J.; BARTOŠÍK, M.; PEKÁREK, J.
Vydáno
6. 1. 2022
Nakladatel
Springer US
Místo
New York
ISSN
0022-2461
Periodikum
Journal of Materials Science
Ročník
57
Číslo
3
Stát
Spojené státy americké
Strany od
1923
Strany do
1935
Strany počet
13
URL
https://link.springer.com/article/10.1007/s10853-021-06846-6
BibTex
@article{BUT175593, author="Imrich {Gablech} and Jan {Brodský} and Petr {Vyroubal} and Jakub {Piastek} and Miroslav {Bartošík} and Jan {Pekárek}", title="Mechanical strain and electric-field modulation of graphene transistors integrated on MEMS cantilevers", journal="Journal of Materials Science", year="2022", volume="57", number="3", pages="1923--1935", doi="10.1007/s10853-021-06846-6", issn="0022-2461", url="https://link.springer.com/article/10.1007/s10853-021-06846-6" }